What is Optical Proximity Correction (OPC)?
OPC pre-distorts the photomask so that diffraction effects cancel out, allowing the printed silicon pattern to match the intended design.
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Lithography & OPC Insights
Background reading on optical proximity correction, aerial imaging and semiconductor patterning, with notes on what the litopc engine actually computes.
Process Window Analysis: Focus-Exposure Matrix Basics
The process window is the range of focus and dose conditions over which a feature prints within spec — mapping it with a Focus-Exposure Matrix is essential for robust manufacturing.
Read more →Edge Placement Error (EPE): What It Measures and Why It Matters
EPE is the signed distance between where the resist contour actually lands and where the design target edge should be — the single most important metric for OPC quality.
Read more →DUV vs EUV Lithography: Resolution Limits Explained
DUV uses 193 nm wavelength light in water immersion to reach ~40 nm half-pitch; EUV cuts to 13.5 nm wavelength in vacuum to break below 13 nm.
Read more →How Aerial Image Simulation Works (Hopkins Model)
The Hopkins model computes aerial image intensity by decomposing the source into incoherent point sources and summing their coherent contributions through the pupil function.
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